? 2003 ixys all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 200 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 200 v v gs continuous 20 v v gsm transient 30 v i d25 t c = 25 c50a i dm t c = 25 c, note 1 232 a i ar t c = 25 c58a e ar t c = 25 c30mj e as t c = 25 c 1.0 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss 5 v/ns t j 150 c, r g = 2 ? p d t c = 25 c 300 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.062 in.) from case for 10 s 250 c v isol 50/60 hz, rms t = 1 min 2500 v~ weight 5 g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 250 a 200 v v gs(th) v ds = v gs , i d = 4ma 2.0 4.0 v i gss v gs = 20 v, v ds = 0 100 na i dss v ds = v dss t j = 25 c 25 a v gs = 0 v t j = 125 c 1 ma r ds(on) v gs = 10 v, i d = 29a 40 m ? note 2 ds98591b(01/03) g d features z silicon chip on direct-copper-bond substrate - high power dissipation - isolated mounting surface - 2500v electrical isolation z low drain to tab capacitance(<50pf) z ixys advanced low q g process z rugged polysilicon gate cell structure z unclamped inductive switching (uis) rated z fast intrinsic diode applications z dc-dc converters z battery chargers z switched-mode and resonant-mode power supplies z dc choppers z ac motor control advantages z easy assembly z space savings z high power density g = gate d = drain s = source * patent pending isolated back surface* ixfr 58n20q v dss = 200 v i d25 =50a r ds(on) = 40 m ? ? ? ? ? t rr 200 ns hiperfet tm power mosfets isoplus247 tm q-class (electrically isolated back surface) n-channel enhancement mode avalanche rated, high dv/dt low gate charge and capacitances isoplus 247 tm e153432 preliminary data sheet
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 29a note 2 24 34 s c iss 3600 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 870 pf c rss 280 pf t d(on) 20 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = 29a 40 n s t d(off) r g = 1.5 ? (external), 40 n s t f 13 ns q g(on) 98 140 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 29a 25 35 nc q gd 45 70 nc r thjc 0.5 k/w r thck (to-247) 0.15 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 58 a i sm repetitive, note 1 232 a v sd i f = i s , v gs = 0 v, note 2 1.5 v t rr 200 ns q rm 0.7 c i rm 7a i f = i s , -di/dt = 100 a/ s, v r = 100 v note: 1. pulse width limited by t jm 2. pulse test, t 300 s, duty cycle d 2 % ixfr 58n20q isoplus 247 outline
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